c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . WDW80DK40B product description 80 80 80 80 a, a, a, a, 4 4 4 4 00 00 00 00 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics wt- d004 -rev.a 1 jan .201 4 1010 features ? ultrafast recovery time ? soft recovery characteristics ? low recovery loss ? low forward voltage ? high reliability by planer design ? low leakage current general description frd from winsemi utilizes advanced processing techniques to achieve ultrafast recovery times and higher forward current. its soft recovery characteristics and high reliability suit for wide industrial applications. applications ? freewheeling, snubber, clamp ? inversion welder ? pfc ? plating power supply ? ultrasonic cleaner and welder ? converter & chopper ? ups absolute m aximum r atings symbol parameter test conditions value units v r maximum d.c.reverse voltage 400 v v rrm maximum repetitive revers voltage 400 v i f(av) average forward current tc=110 ,per diode 40 a tc=110 ,per package 80 a i f (rms) rms forward current tc =11 0 ,per diode 56 a i fsm no-repetitive peak surge current t j =45 ,t=10ms,50hz,sine 400 a p d power dissipation 156 w t j junction temperature 150 t stg storage temperature range - 40 ~1 50 torque module-to-sink recommended 1.1 n.m r jc thermal resistance junction-to-case 0.8 /w weight 6.0 g a a a a 2 2 2 2 a1 a1 a1 a1 c c c c
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 2 / 6 WDW80DK40B product description 80 80 80 80 a, a, a, a, 4 4 4 4 00 00 00 00 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics electrical characteristics t c =25 symbol parameter test conditions value units min typ max i rm reverse leakage current v r =400v - - 10 a v r =400v,t j =125 - - 150 a v f forward voltage drop i f = 40 a - 1.3 1.7 v i f = 4 0a ,tj=125 - 1.1 - v t rr reverse recovery time i f = 1 a ,v r =30,di/dt=-200a/ s - 22 - ns t rr reverse recovery time i f = 40 a ,v r =200v di f /dt=-200a/ s,t j =25 - 52 - ns i rrm max. reverse recovery current - 4.5 - a t rr reverse recovery time i f = 40 a ,v r =200v di f /dt=-200a/ s,t j =125 - 71 - ns i rrm max. reverse recovery current - 9 - a
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 3 / 6 WDW80DK40B product description 80 80 80 80 a, a, a, a, 4 4 4 4 00 00 00 00 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics typical performance curres fig.1 forward voltage drop vs forward current fig.2 reverse recovery time vs di f /dt fig.3 reverse recovery current vs di f /dt fig.4 reverse recovery charge vs di f /dt fig.5 dynamic parameters vs junction temperature fig.6 transient thermal impedance
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 4 / 6 WDW80DK40B product description 80 80 80 80 a, a, a, a, 4 4 4 4 00 00 00 00 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.7 reverse recovery parameter test circuit fig.8 reverse recovery waveform and definitions
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 5 / 6 WDW80DK40B product description 80 80 80 80 a, a, a, a, 4 4 4 4 00 00 00 00 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics to- 3pb package dimension
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 6 / 6 WDW80DK40B product description 80 80 80 80 a, a, a, a, 4 4 4 4 00 00 00 00 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : 86-0755-82506257 fax : 86-0755-82506299 web site : www.winsemi.com
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